Low-Prandtl-number B\'enard-Marangoni convection in a vertical magnetic field

The effect of a homogeneous magnetic field on surface-tension-driven B\'{e}nard convection is studied by means of direct numerical simulations. The flow is computed in a rectangular domain with periodic horizontal boundary conditions and the free-slip condition on the bottom wall using a pseudospectral Fourier-Chebyshev discretization. Deformations of the free surface are neglected. Two- and three-dimensional flows are computed for either vanishing or small Prandtl number, which are typical of liquid metals. The main focus of the paper is on a qualitative comparison of the flow states with the non-magnetic case, and on the effects associated with the possible near-cancellation of the nonlinear and pressure terms in the momentum equations for two-dimensional rolls. In the three-dimensional case, the transition from a stationary hexagonal pattern at the onset of convection to three-dimensional time-dependent convection is explored by a series of simulations at zero Prandtl number.Comment: 26 pages, 9 figure

Transient Rayleigh-Benard-Marangoni Convection due to Evaporation : a Linear Non-normal Stability Analysis

The convective instability in a plane liquid layer with time-dependent temperature profile is investigated by means of a general method suitable for linear stability analysis of an unsteady basic flow. The method is based on a non-normal approach, and predicts the onset of instability, critical wave number and time. The method is applied to transient Rayleigh-Benard-Marangoni convection due to cooling by evaporation. Numerical results as well as theoretical scalings for the critical parameters as function of the Biot number are presented for the limiting cases of purely buoyancy-driven and purely surface-tension-driven convection. Critical parameters from calculations are in good agreement with those from experiments on drying polymer solutions, where the surface cooling is induced by solvent evaporation.Comment: 31 pages, 8 figure

Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information

The extraordinary Hall effect in coherent epitaxial tau (Mn,Ni)Al thin films on GaAs

Ultrathin coherent epitaxial films of ferromagnetic tau(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal tau unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3-7.1 muOMEGA-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and -7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, tau(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information

Nutritional properties and health aspects of pulses and their use in plant-based yogurt alternatives

Plant-based yogurt alternatives are increasing inmarket value,while dairy yogurt sales are stagnating or even declining. The plant-based yogurt alternatives market is currently dominated by products based on coconut or soy. Coconutbased products especially are often low in protein and high in saturated fat, while soy products raise consumer concerns regarding genetically modified soybeans, and soy allergies are common. Pulses are ideally suited as a base for plant-based yogurt alternatives due to their high protein content and beneficial amino acid composition. This review provides an overview of pulse nutrients, pro-nutritional and anti-nutritional compounds, how their composition can be altered by fermentation, and the chemistry behind pulse protein coagulation by acid or salt denaturation. An extensive market review on plant-based yogurt alternatives provides an overview of the current worldwide market situation. It shows that pulses are ideal base ingredients for yogurt alternatives due to their high protein content, amino acid composition, and gelling behavior when fermented with lactic acid bacteria. Additionally, fermentation can be used to reduce anti-nutrients such as α-galactosides and vicine or trypsin inhibitors, further increasing the nutritional value of pulse-based yogurt alternatives

Epitaxial-tau(Mn,Ni)Al/(Al,Ga)As heterostructures: Magnetic and magneto-optic properties

Ferromagnetic Perpendicularly magnetized epitaxial thin films of tau (Mn,Ni)AI have been successfully grown on AlAs/GaAs heterostructures by molecular beam epitaxy. We have investigated the polar Kerr rotation and magnetization of tau MnAl and (Mn,Ni) Al as a function of Mn and Ni concentration. The largest polar Kerr rotation and remnant magnetization were obtained for Mn0.5Al0.5 thin films with values of 0.16-degrees and 224 emu/cm3, respectively. We observed that the Kerr rotation and magnetization remained constant with Ni additions up to about 12 at. % and subsequently decreased with further Ni additions. We discuss these results and one possible method of enhancing the Kerr rotation

Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain

We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitative validation of the theoretical description of magnetotransport through a single ferromagnetic domain. Our analysis furthermore indicates the relevance of magneto-impurity scattering as a mechanism for magnetoresistance in (Ga,Mn)As.Comment: 5 pages, 4 figures; v2: missing references included, figures recompressed to improve readabilit